2008. 12. 19 1/5 semiconductor technical data kmc7d0cn20ca common n-ch trench mosfet revision no : 3 general description switching regulator and dc-dc converter applications. it?s mainly suitable for li-ion battery pack. features v dss =20v, i d =7a. low drain to source on resistance. : r ds(on) =20.5m (max.) @ v gs =4.5v : r ds(on) =21.0m (max.) @ v gs =4.0v : r ds(on) =22.5m (max.) @ v gs =3.1v : r ds(on) =26.0m (max.) @ v gs =2.5v esd protection. super high dense cell design. maximum rating (ta=25 ) dim millimeters a a a1 a1 c b b d c e e1 tssop-8 6.40 0.20 0.65 typ. 1.2 max 0.15 max d e e1 4.40 0.10 + _ 0.28 1 + _ l l 0.50 0.20 + _ 0.25 3.0 0.10 gauge plane 14 5 8 + _ + _ note > *surface mounted on 1? 1? fr4 board, t ?a 10sec 1 2 s d d 1 s 1 g 2 3 4 8 7 6 5 1 s 2 g 2 s 1 2 3 rg rg 4 8 pin connection (top view) 7 6 5 kmc7d0 cn20ca type name lot no. characteristic symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current dc i d * 7 a pulsed i dp * 28 source to drain diode current i s * 1.7 a drain power dissipation ta = 25 p d * 1.5 w maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja * 83.3 /w marking
2008. 12. 19 2/5 kmc7d0cn20ca revision no : 3 electrical characteristics (ta=25 ) note > *pulse test : pulse width 300 , duty cycle 2%. characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 20 - - v drain cut-off current i dss v ds =16v, v gs =0v - - 1 a gate to source leakage current i gss v gs = 10v, v ds =0v - - 10 a gate threshold voltage v th v ds =v gs, i d =250 a 0.5 0.7 1.5 v drain to source on resistance r ds(on) * v gs =4.5v, i d =4.0a - 16.5 20.5 m v gs =4.0v, i d =3.0a - 17.0 21.0 v gs =3.1v, i d =3.0a - 18.5 22.5 v gs =2.5v, i d =3.0a - 20.5 26.0 gate resistance r g f=1mhz - 2.5 - k forward transconductance g fs * v ds =5v, i d =5a - 12 - s dynamic total gate charge q g * v ds =10v, i d =7a v gs =4.0v - 6.7 - nc gate to source charge q gs * - 0.8 - gate to drain charge q gd * - 3.2 - turn-on delay time t d(on) v dd =10v, v gs =4.0v i d =4.0a, r g =6 - 1.0 - s turn-on rise time t r - 2.1 - turn-off delay time t d(off) - 8.5 - turn-off fall time t f - 7.5 - source to drain diode ratings source to drain diode forward voltage v sd * v gs =0v, i s =1.7a - 0.8 1.2 v
2008. 12. 19 3/5 kmc7d0cn20ca revision no : 3 fig 1. i d - v ds drain to source voltage v ds (v) 0 0 1 1 6 30 24 18 12 0 6 30 24 18 12 2345 30 5 0 25 20 15 10 612 030 24 18 fig 6. i s - v sd drain current i d (a) drain current i d (a) fig 4. r ds(on) - t j fig 2. r ds(on) - i d -75 -50 -25 25 50 75 150 125 100 0 reverse drain current i s (a) 10 100 0.9 1.5 1.3 0.7 1.1 0.1 0.01 0.1 0.5 0.3 source to drain forward voltage v sd (v) 10 20 0 30 50 40 drain to source on-resistance r ds(on) (m ? ) drain to source on-resistance r ds(on) (m ? ) junction temperature tj ( ) c v gs =4.5,4.0,3.1,2.5v v gs =2.5v v gs =4.5v v gs =4.5v v gs =2.5v v gs =2v gate to source voltage v gs (v) 1.0 2.0 0 0.5 1.5 2.5 fig 3. i d - v gs drain current i d (a) 25 c -25 c 125 c 25 c -40 c 85 c i d = 4a pulse test common source t a =25 c pulse test gate threshold voltage v th (v) fig 5. v th - t j -75 -50 -25 0.8 0 0.4 2.0 1.6 1.2 050100 25 150 125 75 junction temperature tj ( ) c common source v gs = v ds, i d = 250 a pulse test
2008. 12. 19 4/5 kmc7d0cn20ca revision no : 3 gate charge q g (nc) 0 5 3 1 2 4 3.0 6.0 04.5 7.5 1.5 fig 8. v gs - q g gate to source voltage v gs (v) v ds = 10v i d = 7a square wave pulse duration tw (sec) 10 1 fig 10. transient thermal response curve normalized transient thermal resistance 10 -1 10 -2 1 10 1 10 3 10 2 10 1 10 -1 10 1 10 -2 1 10 2 10 2 10 3 10 4 10 -3 10 -2 10 -1 1 0.02 0.1 0.2 duty cycle 0.5 single pulse 0.05 drain to source voltage v ds (v) capacitance c (pf) fig 7. c - v ds c oss c iss c rss v gs = 0 f =1 mhz 10 1 10 -1 10 -1 10 1 10 -2 10 -2 1 1 10 2 10 2 drain to source voltage v ds (v) fig 9. safe operating area operating in this area is limited by r ds(on) 200 s 1ms 10ms 100ms dc v gs = 4.5v single pulse ta = 25 c drain current i d (a) - duty cycle, d=t1/t2 t 1 t 2 p dm t j(max) - t a - r thja = p d
2008. 12. 19 5/5 kmc7d0cn20ca revision no : 3 fig 11. gate charge v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig 12 . resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 4.0 v 6 ? r l 0.5 v dss 0.5 v dss
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